Semiconductor manufacturing apparatus

ABSTRACT

Provided is a semiconductor manufacturing apparatus, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The semiconductor manufacturing apparatus comprises: a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

The present application is a divisional of application Ser. No.12/201,606 filed Aug. 29, 2008; the entire contents of which are herebyincorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor manufacturingapparatus.

2. Description of the Prior Art

Memory devices such as flash memory, Dynamic Random Access Memory (DRAM)and Static Random Access Memory (SRAM), or semiconductor devices such aslogic device, in recent years, are required to be highly integrated, andtherefore miniaturization of patterns is essential. To integrate a lotof devices in a small area, the individual devices should be formed insmall size, and therefore both the line width of the pattern to beformed and the fine pitch of spacing thereof should be made small.However, since a photolithography process for forming a desired patternis limited in resolution, there is a limitation in forming a patternwith a fine pitch.

In recent years, technology (pattern forming technology), which forms afine pattern on a substrate and processes an under layer of the patternthrough an etching process by using the pattern as a mask, is widelyapplied in IC fabrication of semiconductor industry and attracts a greatattention. Therefore, as one of lithography technologies which have beennewly proposed, a double patterning method, which forms a photoresistpattern by performing a patterning two or more times, is underinvestigation. According to this double patterning method, it isconsidered that a pattern can be formed more finely than a patternformed by one-time patterning, and, as an example, technology whichperforms an exposure two or more times is under investigation.

In the double patterning method, in order to form a second photoresistpattern on a first photoresist pattern, it is required to establish aprocess which does not cause any damage to the first photoresist patternduring the formation of the second photoresist pattern. Specifically, itis required to develop a process technology which overcomes thefollowing problems: (1) deterioration of resistor property, which iscaused when a solvent contained in a photoresist penetrates the firstphotoresist pattern during the formation of the second photoresistpattern; (2) deformation of the first photoresist pattern by a thermaltreatment applied during the second photoresist processing (a typicalresin-based photoresist material is deformed if it is heated above 150°C.); (3) occurrence of misalignment from a resistor dimension of thefirst photoresist pattern in a development process during the formationof the second photoresist pattern (practically, a development timebecomes as long as a processing time of the second photoresist, thuscausing the misalignment from a desired resistor dimension); and (4)occurrence of damage to the first photoresist when rework of the secondphotoresist processing occurs.

SUMMARY OF THE INVENTION

A major object of the present invention is to provide a semiconductormanufacturing apparatus, which is capable of maintaining the stabilityof patterning precision in a double patterning technology where a secondphotoresist forming process has no adverse effects such as the above (1)to (4) on a first photoresist.

According to another aspect of the present invention, there is provideda semiconductor manufacturing apparatus, comprising: a photoresistprocessing unit for forming a photoresist pattern in a predeterminedregion on a substrate to which a predetermined process is applied; and asubstrate processing unit for forming a thin film on the surface of atleast the photoresist pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing schematic configuration of asubstrate processing apparatus, relevant to a preferred embodiment ofthe present invention.

FIG. 2 is a diagram showing schematic configuration of a vertical typeprocessing furnace and members accompanying therewith used in thepreferred embodiment of the present invention, and in particular, alongitudinal cross-sectional view of the processing furnace part.

FIG. 3 is a cross-sectional view taken along the A-A line of FIG. 2.

FIG. 4 is a schematic diagram showing formation of a photoresist patternon a wafer used as a substrate, in a preferred embodiment of the presentinvention.

FIG. 5 is a diagram showing schematic main gas supply sequence in thecase where a SiO₂ film is formed by an Atomic Layer Deposition (ALD)method, in a preferred embodiment of the present invention.

FIG. 6 is a diagram showing the case where a SiO₂ film is formed by anALD method, in a preferred embodiment of the present invention.

FIG. 7 is a diagram showing a wet etching property of a SiO₂ film, in apreferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Explanation will be given below on preferred embodiments of the presentinvention with reference to drawings. A substrate processing apparatusrelevant to the present embodiment is configured as an example of asemiconductor manufacturing apparatus used in fabrication of asemiconductor device (IC). In the following explanation, as an exampleof the substrate processing apparatus, explanation will be given on thecase of using a vertical type apparatus which performs a film formingprocess or the like on a substrate. However, the present invention isnot premised on the use of the vertical type apparatus, and may use, forexample, a single wafer type apparatus. In addition, a film formingmechanism is not limited to a SiO₂ film, which is combination of a Simaterial, an oxidation material and a catalyst, and can apply alow-temperature film forming technology, for example, a film formingtechnology using light energy.

As shown in FIG. 1, in a substrate processing apparatus 101, a cassette110 storing a wafer 200, which is an example of a substrate, is used,and the wafer 200 is made of a material such as silicon. The substrateprocessing apparatus 101 is provided with a housing 111, and a cassettestage 114 is installed at the inside of the housing 111. The cassette110 is designed to be carried in on a cassette stage 114, or carried outfrom the cassette stage 114, by an in-plant carrying unit (not shown).

The cassette stage 114 is installed so that the wafer 200 maintains avertical position inside the cassette 110, and a wafer carrying-in andcarrying-out opening of the cassette 110 faces an upward direction, bythe in-plant carrying unit. The cassette stage 114 is configured so thatthe cassette 110 is rotated 90 degrees counterclockwise in alongitudinal direction to backward of the housing 111, and the wafer 200inside the cassette 110 takes a horizontal position, and the wafercarrying-in and carrying-out opening of the cassette 110 faces thebackward of the housing 111.

Near to the center portion inside the housing 111 in a front and backdirection, a cassette shelf 105 is installed to store a plurality ofcassettes 110 in a plurality of stages and a plurality of rows. At thecassette shelf 105, a transfer shelf 123 is installed to store thecassettes 110 which are carrying objects of a wafer transfer mechanism125.

At the upward of the cassette stage 114, a standby cassette shelf 107 isinstalled to store a standby cassette 110.

Between the cassette stage 114 and the cassette shelf 105, a cassettecarrying unit 118 is installed. The cassette carrying unit 118 isconfigured by a cassette elevator 118 a, which is capable of holding andmoving the cassette 110 upward and downward, and a cassette carryingmechanism 118 b as a carrying mechanism. The cassette carrying unit 118is designed to carry the cassette 110 in and out of the cassette stage114, the cassette shelf 105, and/or the standby cassette shelf 105 bycontinuous motions of the cassette elevator 118 a and the cassettetransfer mechanism 118 b.

At the backward of the cassette shelf 105, the wafer transfer mechanism125 is installed. The wafer transfer mechanism 125 is configured by awafer transfer unit 125 a, which is capable of horizontally rotating orstraightly moving the wafer 200, and a wafer transfer unit elevator 125b for moving the wafer transfer unit 125 a upward and downward. At thewafer transfer unit 125 a, tweezers 125 c for picking up the wafer 200is installed. By the continuous operation of the wafer transfer unit 125a and the wafer transfer unit elevator 125 b, the wafer transfermechanism 125 is configured to charge or discharge the wafer 200into/from a boat 217, with the tweezers 125 c as a placement part of thewafer 200.

At the upward of the rear portion of the housing 111, a processingfurnace 202 for thermally processing the wafer 200 is installed, and thelower end portion of the processing furnace 202 is configured to beopened and closed by a throat shutter 147.

At the downward of the processing furnace 202, a boat elevator 115 isinstalled to elevate the boat 217 in the processing furnace 202. An arm128 is connected to an elevating table of the boat elevator 115, and aseal cap 219 is horizontally attached to the arm 128. The seal cap 219is configured to vertically support the boat 217 and, at the same time,close the lower end portion of the processing furnace 202.

The boat 217 is installed with a plurality of holding members, and isconfigured to horizontally hold a plurality of sheets (for example, fromabout 50 to 150 sheets) of wafers 200 in a state of being verticallyarranged, with their centers aligned.

At the upward of the cassette shelf 105, a clean unit 134 a is installedfor supplying clean air, that is, purified atmosphere. The clean unit134 a is configured by a supply fan and a dust-proof filter, so as toflow clean air through the inside of the housing 111.

At the left end portion of the housing 111, a clean unit 134 b isinstalled for supplying clean air. The clean air unit 134 b is alsoconfigured by a supply fan and a dust-proof filter, so that the cleanair blown from the clean unit 134 b flows through the surrounding areaof the wafer transfer unit 125 a, and the boat 217 and the like, andthen is exhausted to the outside of the housing 111.

Then, explanation will be given on main operation of the substrateprocessing apparatus 101.

When the cassette 110 is carried in onto the cassette stage 114 by thein-plant carrying unit (not shown), the cassette 110 is mounted so thatthe wafer 200 is held in a vertical position, and the wafer carrying-inand carrying-out opening of the cassette 110 faces an upward direction.Thereafter, the cassette 110 is rotated, by the cassette stage 114, 90degrees counterclockwise in a longitudinal direction, so that the wafer200 inside the cassette 110 takes a horizontal position, and the wafercarrying-in and carrying-out opening of the cassette 110 faces thebackward of the housing 111.

Then, the cassette 110 is automatically carried and placed at a specificshelf position of the cassette shelf 105 or the standby cassette shelf107 by the cassette carrying unit 118, and stored temporarily andtransferred to the transfer shelf 123 from the cassette shelf 105 or thestandby cassette shelf 107 by the cassette carrying unit 118, ordirectly transferred to the transfer shelf 123.

When the cassette 110 is transferred to the transfer shelf 123, thewafer 200 is picked up from the cassette 110 through the wafercarrying-in and carrying-out opening by the tweezers 125 c of the wafertransfer unit 125 a, and is charged into the boat 217. The wafertransfer unit 125 a, which delivers the wafer 200 to the boat 217,returns to the cassette 110 and charges the next wafer 200 into the boat217.

When predetermined sheets of the wafers 200 are charged into the boat217, the lower end portion of the processing furnace 202, which was keptclosed by the throat shutter 147, is opened by the throat shutter 147.Subsequently, the boat 217 holding a group of wafers 200 is loaded intothe processing furnace 202 by the elevating motion of the boat elevator115, and the lower end portion of the processing chamber 202 is closedby the seal cap 219.

After the loading, an optional processing is applied to the wafer 200 inthe processing furnace 202. After the processing, the wafer 200 and thecassette 110 are carried out of the housing 111 in a reverse sequence ofthe above.

As shown in FIG. 2 and FIG. 3, at the processing furnace 202, a heater207 for heating the wafer 200 is installed. The heater 207 includes acylindrical insulation member with its upward being closed, and aplurality of heater wires, and has a unit configuration where the heaterwires are installed around the insulation member. At the inside of theheater 207, a reaction tube 203 made of quartz is installed forprocessing the wafer 200.

At the lower end portion of the reaction tube 203, a manifold 209 madeof stainless steel or the like is installed via an O-ring 220 which is asealing member. The lower opening of the manifold 209 is air-tightlyblocked via the O-ring 220 by a seal cap 219 which is a cap body. In theprocessing furnace 202, a processing chamber 201 is formed by at leastthe reaction tube 203, the manifold 209 and the seal cap 219.

At the seal cap 219, a boat support stand 218 is installed forsupporting the boat 217. As shown in FIG. 1, the boat 217 includes abottom plate 210, which is fixed to the boat support stand 218, and atop plate 211, which is installed above the bottom plate 210, and aplurality of supporters 212 are installed between the bottom plate 210and the top plate 211. At the boat 217, a plurality of wafers 200 areheld and supported by the supporters 212 of the boat 217, in a statethat the wafers 200 are arranged at constant spacing and maintained in ahorizontal position.

At the above processing furnace 202, in a state that a plurality ofwafers 200 to be subjected to batch processing are piled in multiplestages, the boat 217 is supported by the boat support stand 218 andinserted into a processing chamber 201, and the heater 207 heats thewafers 200 inserted in the processing chamber 201 up to a predeterminedtemperature.

As shown in FIG. 2 and FIG. 3, two source gas supply pipelines 310 and320 for supplying source gas, and a catalyst supply pipeline 330 forsupplying catalyst are connected to the processing chamber 201.

At the source gas supply pipeline 310, a mass flow controller 312 and avalve 314 are installed. At the front end portion of the source gassupply pipeline 310, a nozzle 410 is connected. The nozzle 410 extendsin an up-and-down direction along an inner wall of the reaction tube203, in an arc-shaped space between the inner wall of the reaction tube203 constituting the processing chamber 201, and the wafer 200. At theside surface of the nozzle 410, a plurality of gas supply holes 410 afor supplying source gas are formed. The gas supply holes 410 a eachhave the same or gradually-varying opening area and are formed in thesame opening pitch from the lower portion to the upper portion.

Furthermore, at the source gas supply pipeline 310, a carrier gas supplypipeline 510 for supplying carrier gas is connected. At the carrier gassupply pipeline 510, a mass flow controller 512 and a valve 514 areinstalled.

At the source gas supply pipeline 320, a mass flow controller 322 and avalve 324 are installed. At the front end portion of the source gassupply pipeline 320, a nozzle 420 is connected. In the same manner asthe nozzle 410, the nozzle 420 extends in an up-and-down direction alongthe inner wall of the reaction tube 203, in an arc-shaped space betweenthe inner wall of the reaction tube 203 constituting the processingchamber 201, and the wafer 200. At the side surface of the nozzle 420, aplurality of gas supply holes 420 a for supplying source gas are formed.In the same manner as the gas supply holes 410 a, the gas supply holes420 a each have the same or gradually-varying opening area and areformed in the same opening pitch from the lower portion to the upperportion.

Furthermore, at the source gas supply pipeline 320, a carrier gas supplypipeline 520 for supplying carrier gas is connected. At the carrier gassupply pipeline 520, a mass flow controller 522 and a valve 524 areinstalled.

At the catalyst supply pipeline 330, a mass flow controller 332 and avalve 334 are installed. At the front end portion of the catalyst supplypipeline 330, a nozzle 430 is connected. In the same manner as thenozzle 410, the nozzle 430 extends in an up-and-down direction along theinner wall of the reaction tube 203, in an arc-shaped space between theinner wall of the reaction tube 203 constituting the processing chamber201, and the wafer 200. At the side surface of the nozzle 430, aplurality of catalyst supply holes 430 a for supplying catalyst areformed. In the same manner as the gas supply holes 410 a, the catalystsupply holes 430 a each have the same or gradually-varying opening areaand are formed in the same opening pitch from the lower portion to theupper portion.

Furthermore, at the catalyst supply pipeline 330, a carrier gas supplypipeline 530 for supplying carrier gas is connected. At the carrier gassupply pipeline 530, a mass flow controller 532 and a valve 534 areinstalled.

As an example relevant to the above configuration, a Si material[TDMAS:trisdimethylaminosilane, SiH(N(CH₃)₂)₃, DCS: dichlorosilane,SiH₂Cl₂, HCD:hexachlorodisilane, Si₂Cl₆ or TCS: tetrachlorosilane,SiCl₄], as an example of a source gas, is introduced into the source gassupply pipeline 310. H₂O or H₂O₂ as an example of an oxidation materialis introduced into the source gas supply pipeline 320. Pyridine (C₅H₅N),pyrimidine (C₄H₄N₂), or quinoline (C₉H₇N) as an example of catalyst isintroduced into the catalyst supply pipeline 330.

At the processing chamber 201, an exhaust pipeline 231 is connected viaa valve 243 e so as to exhaust the inside of the processing chamber 201.At the exhaust pipeline 231, a vacuum pump 246 is connected andconfigured to vacuum-exhaust the inside of the processing chamber 201 byoperation of the vacuum pump 246. The valve 243 e is an open-close valvewhich enables not only to evacuate the processing chamber 201, or stopevacuation of the processing chamber 201 by opening and closing thevalue, but also adjust pressure inside the processing chamber 201 byadjusting valve opening.

At the center portion of the reaction tube 203, the boat 217 isinstalled. The boat 217 can be moved upward and downward (entered andexited) into/from the reaction tube 203 by the boat elevator 115. At thelower end portion of the boat support stand 218 supporting the boat 217,a boat rotating mechanism 267 for rotating the boat 217 is installed soas to improve processing uniformity. By driving the boat rotatingmechanism 267, the boat 217 supported by the boat support stand 218 isrotated.

A controller 280 is connected to the mass flow controllers 312, 322,332, 512, 522 and 532, the valves 314, 324, 334, 514, 524 and 534, thevalve 243 e, the heater 207, the vacuum pump 246, the boat rotatingmechanism 267 and the boat elevator 115. The controller 280 is anexample of a control unit for controlling an overall operation of thesubstrate processing apparatus 101, and controls flow rate adjustment ofthe mass flow controllers 312, 322, 332, 512, 522 and 532, opening andclosing operation of the valves 314, 324, 334, 514, 524 and 534,opening/closing and pressure adjustment operation of the valve 243 e,temperature adjustment of the heater 207, start and stop of the vacuumpump 246, rotation speed adjustment of the boat rotating mechanism 267,and upward and downward movement of the boat elevator 115.

Next, as an example of a manufacturing method of a semiconductor device,an application of the present invention to fabrication of a large scaleintegration (LSI) circuit is explained.

After a wafer process, LSI is manufactured through an assembly process,a test process, and a reliability test process. The wafer process isdivided into a substrate process, such as oxidation, diffusion and thelike on the silicon wafer, and an interconnection process on the surfaceof the silicon wafer. Cleaning, thermal treatment, and film formationare repeated, based on a lithography process. In the lithographyprocess, a photoresist pattern is formed and an under layer of thepattern is processed through an etching process by using the pattern asa mask.

Herein, explanation will be given on an example of a process sequencewhich forms a photoresist pattern on a wafer 200, with reference to FIG.4.

In the process sequence, a first photoresist pattern forming process fora first photoresist pattern 603 a on a wafer 200, a first photoresistprotection film forming process for a thin film as a first photoresistprotection film on the first photoresist pattern 603 a, and a secondphotoresist pattern forming process for a second photoresist pattern 603b on the thin film are carried out in the above order. The respectiveprocesses will be explained below.

<First Photoresist Pattern Forming Process>

In the first photoresist pattern forming process, the first photoresistpattern 603 a is formed on a hard mask 601 formed on the wafer 200. Atfirst, a first photoresist solvent 602 a is coated on the hard mask 601formed on the wafer 200 (FIG. 4 a). Thereafter, the first photoresistpattern 603 a is formed by baking, selective exposure and developmentusing a mask pattern or the like by light source, such as ArF excimerlight source (193 nm) or KrF excimer light source (248 nm) (FIG. 4 b).

<First Photoresist Protection Film Forming Process>

In the first photoresist protection film forming process, the thin filmis formed as a protection material on the first photoresist pattern 603a, which is formed in the first photoresist pattern forming process, anda region where the first photoresist pattern 603 a is not formed. Thefilm deformation or change of the film quality of the first photoresistpattern 603 a is prevented by protecting the first photoresist pattern603 a from the penetration of the second photoresist solvent 602 a, asdescribed later. Explanation will be given on an example of forming aSiO₂ film as a protection film at extremely low temperature by an AtomicLayer Deposition (ALD) method, by using the substrate processingapparatus 101.

The ALD method as a kind of a Chemical Vapor Deposition (CVD) istechnology which supplies at least two kinds of source gases alternatelyunder the film forming conditions (temperature, time, and the like), forthe substrate to adsorb the source gases with atomic unit and form thefilm through surface reaction. In this case, the control of filmthickness is performed by number of cycles of supplying the source gases(for example, assuming that a film forming speed is 1 Å/cycle, 20 cyclesare executed in the case of forming a film of 20 Å).

In the present embodiment, the case of using HCD as a Si material, H₂Oas an oxidation material, pyridine as a catalyst, and N₂ as a carriergas will be explained with reference to FIG. 1, FIG. 2 and FIG. 5.

In the film forming process, the controller 280 controls the substrateprocessing apparatus 101 as follows. That is, by controlling the heater207, the inside of the processing chamber 201 is maintained at atemperature lower than a deformation temperature of the photoresistfilm, for example, below 150° C., preferably below 100° C., morepreferably 75° C. Thereafter, a plurality of wafers 200 are charged intothe boat 217, and the boat 217 is loaded into the processing chamber201. Thereafter, the boat 217 is rotated by the boat rotating mechanism267, so that the wafers 200 are rotated. Then, the vacuum pump 246 isoperated and, at the same time, the valve 243 e is opened to evacuatethe inside of the processing chamber 201, and if temperature of thewafer 200 reaches 75° C. and temperature is stabilized, the followingfour steps are executed sequentially in a state that temperature insidethe processing chamber 201 is maintained at 75° C.

(Step 1)

While introducing (flowing) HCD into the source gas supply pipeline 310,H₂O into the source gas supply pipeline 320, catalyst into the catalystsupply pipeline 330, and N₂ into the carrier gas supply pipelines 510,520 and 530, the valves 314, 334, 514, 524 and 534 are openedappropriately. However, the valve 324 is in a closed state.

As a result, as shown in FIG. 5, the HCD, while mixing with N₂, flowsout through the source gas supply pipeline 310 to the nozzle 410, and issupplied from the gas supply hole 410 a into the processing chamber 201.In addition, the catalyst, while mixing with N₂, flows out through thecatalyst supply pipeline 330 to the nozzle 430, and is supplied from thecatalyst supply hole 430 a into the processing chamber 201. N₂ flows outthrough the carrier gas supply pipeline 520 to the nozzle 420, and issupplied from the gas supply hole 420 a into the processing chamber 201.The HCD and the catalyst supplied into the processing chamber 201 passthrough the surface of the wafer 200 and are exhausted from the exhaustpipeline 231.

In the above step 1, by controlling the valves 314 and 334, the supplytime of the HCD and the catalyst is set to an optimal time (for example,10 seconds). The valves 314 and 334 are controlled so that the supplyamount ratio of the HCD to the catalyst is set to have a predeterminedratio (for example, 1:1). At the same time, by controlling the valve 243e properly, pressure inside the processing chamber 201 is set to have anoptimal value (for example, 3 Torr) within a predetermined range. In theabove step 1, by supplying the HCD and the catalyst into the processingchamber 201, Si is adsorbed on the first photoresist pattern 603 a andthe hard mask 601 formed on the wafer 200.

(Step 2)

y closing the valves 314 and 334, the supply of the HCD and the catalystis stopped. At the same time, as shown in FIG. 5, by continuouslysupplying N₂ from the carrier gas supply pipelines 510, 520 and 530 intothe processing chamber 201, the inside of the processing chamber 201 ispurged by N₂. The purge time is, for example, 15 seconds. Also, the twoprocesses, that is, the purge and the vacuum exhaust, may be executedwithin 15 seconds. As a result, the HCD and the catalyst remaininginside the processing chamber 201 are discharged from the processingchamber 201.

(Step 3)

In a state that the valves 514, 524 and 534 are opened, the valves 324and 334 are opened appropriately. The valve 314 is in a closed state. Asa result, as shown in FIG. 5, H₂O, while mixing with N₂, flows outthrough the source gas supply pipeline 320 to the nozzle 420, and issupplied from the gas supply hole 420 a into the processing chamber 201.In addition, the catalyst, while mixing with N₂, flows out through thecatalyst supply pipeline 330 to the nozzle 430, and is supplied from thecatalyst supply hole 430 a to the processing chamber 201. Furthermore,N₂ flows out through the carrier gas supply pipeline 510 to the nozzle410, and is supplied from the gas supply hole 410 a to the processingchamber 201. H₂O and the catalyst supplied into the processing chamber201 pass through the surface of the wafer 200 and are exhausted from theexhaust pipeline 231.

In the above step 3, by controlling the valves 324 and 334, the supplytime of H₂O and the catalyst are set to an optimal time (for example, 20seconds). The valves 314 and 334 are controlled so that the supplyamount ratio of H₂O to the catalyst is set to have a predetermined ratio(for example, 1:1). At the same time, by controlling the valve 243 eproperly, pressure inside the processing chamber 201 is set to have anoptimal value (for example, 7 Torr) within a predetermined range. In theabove step 3, by supplying H₂O and the catalyst into the processingchamber 201, a SiO₂ film is formed on the first photoresist pattern 603a and the hard mask 601 formed on the wafer 200.

Necessary property as the oxidation material (material corresponding toH₂O) supplied in the above step 3 is that atoms having highelectronegativity should be contained in the molecule, and haveelectrical deflection. The reason is that since electronegativity of thecatalyst is high, the catalyst lowers the activation energy of thesource gas and accelerates the reaction. Therefore, as the source gassupplied in the above step 3, H₂O or H₂O₂ having OH-bond is suitable,whereas nonpolar molecule such as O₂ or O₃ is unsuitable.

(Step 4)

By closing the valves 324 and 334, the supply of H₂O and the catalyst isstopped. At the same time, as shown in FIG. 5, by continuously supplyingN₂ from the carrier gas supply pipelines 510, 520 and 530 into theprocessing chamber 201, the inside of the processing chamber 201 ispurged by N₂. The purge time is, for example, 15 seconds. Also, the twoprocesses, that is, the purge and the vacuum exhaust, may be executedwithin 15 seconds. As a result, the H₂O and the catalyst remaininginside the processing chamber 201 are discharged from the processingchamber 201.

Thereafter, the steps 1 to 4 are set as one cycle, and this cycle isrepeated a plurality of times to form a SiO₂ film of predeterminedthickness on the first photoresist pattern 603 a and the hard mask 601formed on the wafer 200. In this case, among the respective cycles, asexplained above, it should be noted in the film formation that anatmosphere configured by the Si material and the catalyst in the step 1,and an atmosphere configured by the oxidation material and the catalystshould not be mixed. Therefore, on the first photoresist pattern 603 aand the hard mask 601, the SiO₂ film 604 is formed as the firstphotoresist protection film (FIG. 4 c, FIG. 7).

Thereafter, HCD, H₂O and catalyst remaining inside the processingchamber 201 are exhausted by vacuum-exhausting the inside of theprocessing chamber 201, and the inside of the processing chamber 201 isset to atmospheric pressure by controlling the valve 243 a, and the boat217 is unloaded from the processing chamber 201. In this way, one-timefilm forming processing (batch processing) is finished.

As the thickness of the SiO₂ film 604, about 5%, which is a half pitch(Hp) corresponding to a limit resolution of lithography, is required forthe first photoresist protection film. Therefore, for example, as for Hp30 nm, a proper film thickness is 5 to 25 Å, and the best film thicknessis 15 Å.

<Second Photoresist Pattern Forming Process>

In the second photoresist pattern forming process, the secondphotoresist pattern 603 b is formed on the SiO₂ film 604, which isformed on the first photoresist in the first photoresist protection filmforming process, at a position different from the position where thefirst photoresist pattern 603 a is formed. This process also proceeds inthe same manner as the first photoresist pattern forming process. Atfirst, a second photoresist solvent 602 b is coated on the SiO₂ film 604which is the first photoresist protection film (FIG. 4 d). Thereafter,the second photoresist pattern 603 b is formed by performing baking,exposure and development by ArF excimer light source (193 nm) or KrFexcimer light source (248 nm) (FIG. 4 e).

As mentioned above, fine photoresist pattern is formed by the firstphotoresist pattern forming process, the first photoresist protectionfilm forming process and the second photoresist pattern forming process.FIG. 6 shows the formation of the SiO₂ film by using the ALD method.

Although it has been explained above that the first photoresist pattern603 a is formed on the hard mask formed on the wafer 200, the hard mask601 may be omitted.

In addition, after the second photoresist pattern forming process,predetermined processing (for example, dimension inspection, correctioninspection, rework processing, and the like) is performed and, ifnecessary, a first photoresist protection film removing process may beperformed for removing the SiO₂ film 604.

<First Photoresist Protection Film Removing Process>

In the first photoresist protection film removing process, the SiO₂ film604 as the first photoresist protection film formed in the firstphotoresist protection film forming process is removed.

As the removing method, there are two methods: a wet etching method anda dry etching method. In the case of removing the SiO₂ film 604 by thewet etching method, an HF diluted solution as a hydrogen fluoride (HF)solution is used as an etching solution. The SiO₂ film formed by the ALDmethod is etched at a fast wet etching rate. FIG. 7 shows comparison ofetching rates of SiO₂ films formed by other method, as theircharacteristics. As can been seen from FIG. 7, in the case where a wetetching rate of a thermal oxide film is used as reference, the SiO₂ filmformed by the CVD method has 5 times the wet etching rate of the thermaloxide film, and the SiO₂ film formed by the ALD method has 15 times thewet etching rate of the thermal oxide film, so that the wet etching rateof the SiO₂ film formed by the ALD method is faster.

Moreover, although the above explanation has been given on the processof forming the photoresist pattern two times, the photoresist patternmay be formed three or more time and, in this case, the photoresistpattern forming process and the photoresist protection film formingprocess are repetitively performed predetermined times.

In the case where the photoresist pattern is formed three or more times,if necessary, the protection film may be removed one by one in thefollowing sequence: the first photoresist pattern forming process→thefirst photoresist protection film forming process→the second photoresistpattern forming process→the first photoresist protection film removingprocess→the third photoresist pattern forming process→the secondphotoresist protection film forming process→the fourth photoresistpattern forming process→the second photoresist protection film removingprocess→the fifth photoresist pattern forming process→ . . . .

By using, for example, TDMAS, DCS, HCD or TCS as the Si material andusing, for example, H₂O, H₂O₂, O₂ or O₃ as the oxidation material, theSi material and the oxidation material are supplied alternately by theALD method, and the SiO₂ film of desired film thickness can be formed byrepeating the alternate supply a plurality of times. Therefore, the SiO₂film 604 as the first photoresist protection material can be formed atlow temperature.

As mentioned above, by forming the thin film on the surface of the firstphotoresist pattern, the first photoresist pattern can be protected and,when the second photoresist solvent is coated, the second photoresistsolvent can be prevented from penetrating into the first photoresistpattern.

Furthermore, as mentioned above, since the penetration of the secondphotoresist solvent into the first photoresist pattern is prevented, thesecond photoresist pattern can be formed in a region where the firstphotoresist pattern is not formed, and it is possible to form finephotoresist pattern with a minimum spacing of 50 nm or less between thefirst photoresist pattern and the second photoresist pattern.

Moreover, by forming the thin film on the surface of the firstphotoresist pattern, mechanical strength of the first photoresistpattern can be improved in the second photoresist pattern formingprocess.

A thin film that can undergo a process at an extremely low temperature,such as an extremely low temperature (catalyst) SiO₂ film formed byusing catalyst, can be used as the first photoresist protection film. Inthis case, since the thin film is formed at temperature lower than thephotoresist deformation temperature, deformation of the firstphotoresist pattern can be prevented in the first photoresist protectionfilm forming process.

As for the SiO₂ film, the fast wet etching rate is so fast that the SiO₂film can be easily removed.

In the photoresist processing, typically, errors such as misalignment inposition of the under layer or misalignment in dimension thereof occurfrequently and, in this case, the photoresist pattern is removed throughan ashing process by using oxygen plasma or the like, and a reworkprocess of resuming the photoresist pattern forming process from thebeginning shall be carried out, but the rework process of the secondphotoresist pattern has a problem that the first photoresist pattern isdamaged by oxygen plasma or the like. However, as mentioned above, byforming the thin film such as SiO₂ film which can endure the ashingprocess by oxygen plasma on the first photoresist pattern, the firstphotoresist pattern can be protected in the rework process of the secondphotoresist pattern.

Moreover, in forming the second photoresist pattern, it is required todetect alignment mark, which is formed on the wafer, for positionalignment with the under pattern. Therefore, the thin film as the firstphotoresist protection film is required to be transparent.

In the above-mentioned embodiment, the above explanation has been givenon the extremely low temperature SiO₂ film formed using the Si material,the oxidation material and the catalyst by the ALD method, the firstphotoresist protection film is not limited to the extremely lowtemperature SiO₂ film, but other film forming methods and other kinds offilms can also be applied if film is formed at temperature wheredeformation of the first photoresist pattern is prevented. For example,film forming technologies using light energy, such as a film formingmethod which induces a predetermined reaction by radiating ultravioletrays to the source gas, can be applied.

Furthermore, in the above-mentioned embodiment, the vertical typesubstrate processing apparatus has been explained as an example informing the thin film in the first photoresist protection film formingprocess, but the present invention can also be applied to a single wafertype processing apparatus.

Moreover, in the above-mentioned embodiment, the substrate processingapparatus forming a thin film has been explained as an example of thesemiconductor manufacturing apparatus, but the semiconductormanufacturing apparatus may further include a photoresist processingapparatus forming photoresist pattern, as well as the substrateprocessing apparatus. Therefore, the photoresist pattern formation andthe film formation can be batch-processed.

According to the first manufacturing method of the semiconductor device,relevant to one aspect of the present invention, by forming the thinfilm (for example, SiO₂ film) on the first photoresist pattern, thefirst photoresist pattern is protected and, when the second photoresistsolvent is coated, the second photoresist solvent is prevented frompenetrating into the first photoresist pattern. By protecting thephotoresist at temperature lower than the first photoresist deformationtemperature, the thin film for protecting the first photoresist patterncan be formed while preventing the deformation of the first photoresistpattern.

Furthermore, according to the first manufacturing method of thesemiconductor device, relevant to an aspect of the present invention, byforming the thin film on the first photoresist pattern, the mechanicalstrength of the first photoresist pattern can be improved in the secondphotoresist pattern formation.

According to the first manufacturing method of the semiconductor device,relevant to an aspect of the present invention, the SiO₂ film has a fastwet etching rate; therefore, if using the SiO₂ film as the firstphotoresist pattern protection film, it can be easily removed.

Furthermore, according to the first manufacturing method of thesemiconductor device, relevant to an aspect of the present invention, byforming the thin film (for example, SiO₂ film) on the first photoresistpattern, the first photoresist pattern can be protected during therework of the second photoresist pattern.

Moreover, according to the semiconductor manufacturing method relevantto an aspect of the present invention, by forming the thin film (forexample, SiO₂ film) on the first photoresist pattern, the firstphotoresist pattern can be protected and, when the second photoresistsolvent is coated, the second photoresist solvent is prevented frompenetrating into the first photoresist pattern. In addition, by formingthe thin film at extremely low temperature lower than the firstphotoresist deformation temperature at which the first photoresistpattern is formed, the thin film for protecting the first photoresistpattern can be formed while preventing the deformation of the firstphotoresist pattern.

Moreover, according to the semiconductor manufacturing apparatusrelevant to an aspect of the present invention, the semiconductormanufacturing apparatus includes the photoresist processing apparatusforming the photoresist pattern, and the substrate processing apparatusforming the thin film, so that the photoresist pattern formation and thefilm formation can be batch-processed.

Moreover, according to the semiconductor manufacturing apparatusrelevant to an aspect of the present invention, by forming the thin film(for example, SiO₂ film) on the first photoresist pattern, the firstphotoresist pattern can be protected during the rework of the secondphotoresist pattern.

(Supplementary Note)

The present invention also includes the following embodiments.

(Supplementary Note 1)

According to another embodiment of the present invention, there isprovided a semiconductor manufacturing apparatus, comprising: aphotoresist processing unit for forming a photoresist pattern in apredetermined region on a substrate to which a predetermined process isapplied; and a substrate processing unit for forming a thin film on thesurface of at least the photoresist pattern.

(Supplementary Note 2)

In the semiconductor manufacturing apparatus of Supplementary Note 1, itis preferable that the photoresist processing unit comprises: a firstphotoresist processing unit for forming a first photoresist pattern inthe predetermined region on the substrate to which the predeterminedprocess is applied; and a second photoresist processing unit for forminga second photoresist pattern in a region where the first photoresistpattern is not formed.

(Supplementary Note 3)

In the semiconductor manufacturing apparatus of Supplementary Note 1, itis preferable that the substrate processing unit comprises: a processingchamber for processing the substrate; a material supply unit forsupplying a Si material, an oxidation material, an a catalyst into theprocessing chamber; a heating unit for heating the substrate; and acontroller for controlling at least the material supply unit and theheating unit, wherein the controller controls the heating unit and thematerial supply unit to heat the substrate to processing temperaturelower than a first photoresist deformation temperature, and toalternately supply the Si material and the catalyst, and the oxidationmaterial and the catalyst, into the processing chamber, and repeat thealternate supply a plurality of times.

(Supplementary Note 4)

According to an embodiment of the present invention, there is provided amanufacturing method of the semiconductor device, comprising: forming afirst photoresist pattern in a predetermined region on a substrate;depositing a thin film on the surface of at least the first photoresistpattern; and forming a second photoresist pattern in a region where thefirst photoresist pattern is not formed.

(Supplementary Note 5)

In the manufacturing method of Supplementary Note 4, it is preferablethat the thin film is formed at processing temperature lower than adeformation temperature of a first photoresist forming the firstphotoresist pattern.

(Supplementary Note 6)

In the manufacturing method of Supplementary Note 4, it is preferablethat the thin film is deposited, over the substrate, on the surface ofthe first photoresist pattern and the region where the first photoresistpattern is not formed.

(Supplementary Note 7)

In the manufacturing method of Supplementary Note 4, it is preferablethat the a plurality of first patterns is formed in the predeterminedregion on the substrate, and the thin film is deposited on at least thetop and side of the plurality of first photoresist patterns, so that aminimum spacing of opposite parts of the thin film surface formed in theside is larger than width of the first photoresist pattern.

(Supplementary Note 8)

In the manufacturing method of Supplementary Note 7, it is preferablethat the second photoresist pattern is formed with a minimum spacing of50 nm or less from the first photoresist pattern.

(Supplementary Note 9)

In the manufacturing method of Supplementary Note 4, it is preferablethat the thin film is deposited at processing temperature of 150° C. orless.

(Supplementary Note 10)

In the manufacturing method of Supplementary Note 9, it is preferablethat the thin film is formed at processing temperature of 100° C. orless.

(Supplementary Note 11)

In the manufacturing method of Supplementary note 10, it is preferablethat the thin film is deposited at processing temperature of 75° C.

(Supplementary Note 12)

In the manufacturing method of Supplementary Note 4, it is preferablethat the thin film is transparent to visible rays.

(Supplementary Note 13)

In the manufacturing method of Supplementary Note 12, it is preferablethat the thin film is a SiO₂ film.

(Supplementary Note 14)

In the manufacturing method of Supplementary Note 13, it is preferablethat the SiO₂ film is deposited using a Si material, an oxidationmaterial and a catalyst.

(Supplementary Note 15)

In the manufacturing method of Supplementary Note 14, it is preferablethat the Si material is any one of TDMAS[trisdimethylaminosilane,SiH(N(CH₃)₂)₃], DCS [dichlorosilane, SiH₂Cl₂], HCD[hexachlorodisilane,Si₂Cl₆], and TCS[tetrachlorosilane, SiCl₄].

(Supplementary Note 16)

In the manufacturing method of Supplementary Note 14, it is preferablethat the oxidation material contains a plurality of atoms havingdifferent electronegativity among molecules.

(Supplementary Note 17)

In the manufacturing method of Supplementary Note 16, it is preferablethat the oxidation material is one of H2O and H₂O₂.

(Supplementary Note 18)

In the manufacturing method of Supplementary Note 14, it is preferablethat decomposition temperature of the catalyst is higher thanvaporization temperature of the oxidation material.

(Supplementary Note 19)

In the manufacturing method of Supplementary Note 14, it is preferablethat the catalyst is any one of pyridine (C₅H₅N), pyrimidine (C₄H₄N₂),and quinoline (C₉H₇N).

(Supplementary Note 20)

It is preferable that the manufacturing method of Supplementary Note 4further comprises: removing the second photoresist pattern by an ashingprocess using oxygen plasma, wherein the thin film has a compositionwith resistant property to the oxygen plasma.

(Supplementary Note 21)

In the manufacturing method of Supplementary Note 4, it is preferablethat the thin film is deposited by using a substrate processingapparatus, the substrate processing apparatus comprising: a processingchamber for processing the substrate; a material supply unit forsupplying a Si material, an oxidation material, and a catalyst into theprocessing chamber; and a controller for controlling at least thematerial supply unit, wherein the controller controls the materialsupply unit to alternately supply the Si material and the catalyst, andthe oxidation material and the catalyst, into the processing chamber.

(Supplementary Note 22)

In the manufacturing method of Supplementary Note 4, it is preferablethat the thin film is deposited by a substrate processing apparatus, thesubstrate processing apparatus comprising: a processing chamber forprocessing the substrate; a material supply unit for supplying a Simaterial, an oxidation material, and a catalyst into the processingchamber; a heating unit for heating the substrate; and a controller forcontrolling at least the material supply unit and the heating unit,wherein the controller controls the heating unit so that heatingtemperature of the substrate becomes a processing temperature lower thana deformation temperature of a first photoresist forming the firstphotoresist pattern, and the controller controls the material supplyunit to alternately supply the Si material and the catalyst, and theoxidation material and the catalyst, into the processing chamber, andrepeat the alternate supply a plurality of times.

(Supplementary Note 23)

It is preferable that the manufacturing method of Supplementary Note 4further comprises, after the formation of the second photoresistpattern, removing the thin film.

(Supplementary Note 24)

In the manufacturing method of Supplementary Note 23, it is preferablethat the thin film has a composition which is easily removable.

(Supplementary Note 25)

In the manufacturing method of Supplementary Note 23, it is preferablethat the thin film is removed by a dry etching method.

(Supplementary Note 26)

In the manufacturing method of Supplementary Note 23, it is preferablethat the thin film is a SiO₂ film and is removed by a wet etching methodusing an HF diluted solution.

(Supplementary Note 27)

In the manufacturing method of Supplementary Note 4, it is preferablethat the second photoresist pattern is formed by coating a secondphotoresist solvent, and the thin film has a composition which preventspenetration of the second photoresist solvent.

(Supplementary Note 28)

According to another embodiment of the present invention, there isprovided a photoresist pattern forming method, comprising: forming afirst photoresist pattern in a predetermined region on a substrate;depositing a thin film on the surface of at least the first photoresistpattern; and forming a second photoresist pattern in a region where thefirst photoresist pattern is not formed.

(Supplementary Note 29)

According to another embodiment of the present invention, there isprovided a semiconductor device, manufactured by performing an etchingprocess by using the first photoresist pattern and the secondphotoresist pattern, which are formed by using the photoresist patternforming method of the Supplementary Note 28, as a mask, and performing adesired process on the substrate by processing under films of the firstphotoresist pattern and the second photoresist pattern.

(Supplementary Note 30)

In the semiconductor device of Supplementary Note 29, it is preferablethat a minimum spacing between the first photoresist pattern and thesecond photoresist pattern is 50 nm or less.

(Supplementary Note 31)

In the manufacturing method of Supplementary Note 4, it is preferablethat forming the second photoresist pattern comprises: forming aphotoresist film by coating a photoresist solvent on the substrate wherethe first photoresist pattern and the thin film are formed; exposing thesubstrate using a predetermined mask pattern, and transferring a desiredpattern by selectively exposing the photoresist film to light; anddipping the exposed substrate into a developer to remove the photoresistfilm which is an extra portion.

1. A semiconductor manufacturing apparatus, comprising: a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern.
 2. The semiconductor manufacturing apparatus of claim 1, wherein the photoresist processing unit comprises: a first photoresist processing unit for forming a first photoresist pattern in the predetermined region on the substrate to which the predetermined process is applied; and a second photoresist processing unit for forming a second photoresist pattern in a region where the first photoresist pattern is not formed.
 3. The semiconductor manufacturing apparatus of claim 1, wherein the substrate processing unit comprises: a processing chamber for processing the substrate; a material supply unit for supplying a Si material, an oxidation material, and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller controls the heating unit and the material supply unit to heat the substrate to processing temperature lower than a first photoresist deformation temperature, and to alternately supply the Si material and the catalyst, and the oxidation material and the catalyst, into the processing chamber, and repeat the alternate supply a plurality of times. 